You can download the datasheet from the link given below.Ī trench gate MOSFET is basically an attempt to make a complete chip. Gate to Source Threshold Voltage Temperature Coefficient Thermal Resistance, Junction to Ambient (Note 1a)īreakdown Voltage Temperature Coefficient Operating and Storage Junction Temperature Range This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench process that has been optimized for rDS(on), switching performance and ruggedness.
High power and current handling capability in a widely used surface mount package High performance trench technology for extremely low rDS(on)
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